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ESE 2021 Technical Quiz 37 || MOSFET
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Question 1
Consider an n+ polysilicon-silicon dioxide n-type silicon MOS capacitor. Let Nd = 1015 cm-3, tox =
, 
and 
. What will be the flat-band voltage? If
, and . What will be the flat-band voltage? IfQuestion 2
The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation parameter 
(in V–1) is ____.
(in V–1) is ____.Question 3
The drain of an n-channel MOSFET is shorted to the gate so that VGS = VDS . The threshold voltage (VT) of MOSFET is 1V. If the drain current (ID) is 1 mA for VGS = 2V, then for VGS = 3V, ID is
Question 4
In the three dimensional view of a silicon n-channel MOS transistor shown below. δ = 20 mn. The transistor is of width 1 µm. The depletion width formed at every p-n junction is 10 mn. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9. and ε0 = 8.9 x 10–12 F/m.
The gate-source overlap capacitance is approximately
The gate-source overlap capacitance is approximately
Question 5
In a BJT biased in common emitter configuration given VCB = 2 V. Doping in emitter, base & collector are 10 × 1017 / cm3, 5 × 1016 / cm3 and 2 × 1015 respectively. ni = 1.5 × 1010 / cm3 (ε = 11.7εo), the NPN BJT has base width of 0.8 μm
Find effective base width of base :
Find effective base width of base :
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