Time Left - 09:00 mins
ISRO Quiz 15
Attempt now to get your rank among 105 students!
Question 1
Consider an n-channel depletion-mode MOSFET has parameters VTN = –2V and kn = 80A/V2. The drain current is
ID = 1.5mA at VGS = 0 and VDS = 3V. Then W/L ratio is ______
Question 2
A TE10 rectangular waveguide is to be designed for operation over 25-35 GHz and the band centre is 1.5 times the cutoff frequency. What should be the dimension of the broad side?
Question 3
For the events A & B to be independent the probability that both occur is and probability that neither of them occur is .Then the probability of occurrence of A is
Question 4
The diffusion current in a sample of Ge having concentration gradient for electrons of 1.5 × 1022 electrons/m4 is ______ A/m2
[Assume the diffusion constant for electrons = 0.00120 m2/sec]
Question 5
Doping in p side of PN diode is Four times that of doping in n side. Given width of depletion region under open circuit condition as 8A°. Penetration of depletion region into n side is
Question 6
The z - transform of a signal is given by . Its final value is
Question 7
Consider the following circuit.
They y – parameters are
Question 8
If x(t) = the Fourier transform X() is given by
- 105 attempts
- 0 upvotes
- 0 comments
Tags :
ESE & GATE ECGeneralJun 6ESE & GATE EC