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ISRO Quiz 15

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Question 1

Consider an n-channel depletion-mode MOSFET has parameters VTN = –2V and kn = 80A/V2. The drain current is

ID = 1.5mA at VGS = 0 and VDS = 3V. Then W/L ratio is ______

Question 2

A TE10 rectangular waveguide is to be designed for operation over 25-35 GHz and the band centre is 1.5 times the cutoff frequency. What should be the dimension of the broad side?

Question 3

For the events A & B to be independent the probability that both occur is and probability that neither of them occur is .Then the probability of occurrence of A is

Question 4

The diffusion current in a sample of Ge having concentration gradient for electrons of 1.5 × 1022 electrons/m4 is ______ A/m2

[Assume the diffusion constant for electrons = 0.00120 m2/sec]

Question 5

Doping in p side of PN diode is Four times that of doping in n side. Given width of depletion region under open circuit condition as 8A°. Penetration of depletion region into n side is

Question 6

The z - transform of a signal is given by . Its final value is

Question 7

Consider the following circuit.

They y – parameters are

Question 8

If x(t) =  the Fourier transform X() is given by
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Jun 6ESE & GATE EC