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BARC Quiz 17

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Question 1

A circuit consists of two clocked JK flip-flops connected as follows Description: F:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE-ME-20-April\GATE-IES-EC-Digital=Electronics-Circuits_files\image407.png and Description: F:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE-ME-20-April\GATE-IES-EC-Digital=Electronics-Circuits_files\image408.png. Each flip-flop receives the clock input simultaneously. The circuit acts as a

Question 2

A fibre-optic cable has the indices of refraction of core of 1.6 and of cladding of 1.4. For an angle of incidence 700, the angle of return light ray will be

Question 3

Consider the following RC circuit. The capacitor has an initial charge q0 such that it opposes the flow of charging current:

The response of the circuit i(t) will be

Question 4

A bandwidth of 10 kHz is required for AM system. If the lowest frequency component in the modulated signal is 555 kHz, carrier frequency in kHz is

Question 5

The open-loop transfer function of a unity feedback control system is The closed-loop transfer function will have poles at.

Question 6

In the circuit shown in figure, A is a parallel in, parallel–out 4–bit register, which loads at the rising edge of the clock C. The input lines are connected to a 4–bit bus, W. Its output acts as the input to a 16 × 4 ROM whose output is floating when the enable input E is 0. A partial table of the contents of the ROM is as follows :



The clock to the register is shown, and the data on the W bus at time t1 is 0110. The data on the bus at time t2 is

Question 7

For an 8 feet (2.4 m) parabolic disk antenna operating at 4 GHz, the minimum distance required for far field measurement is closest to

Question 8

C-V characteristics of silicon MOS capacitor having an area of 10-4 cm2 is shown. The permittivity’s of silicon and SiO2 are respectively 10-12 F/cm and 3 .5 x 10-13F/cm, then maximum depletion layer width in silicon is

Question 9

Which of the following is error correcting code?

Question 10

The slope of the diffusion capacitance verses forward-bias current of a p+n of Si diode is The hole lifetime is
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Jul 11ESE & GATE EC