Time Left - 15:00 mins

GATE EC 2022: EDC Quiz 10

Attempt now to get your rank among 134 students!

Question 1

In a transistor 98.6 % of the carriers injected into the base cross the collector-base junction. If the leakage current is 6μA and collector current is 18 mA. Then the emitter current(in mA) is

Question 2

Which of the following statements concerning IC fabrication is not correct?

Question 3

Assuming V_CEsat = 0.2 V and β = 50, the minimum base current (I_B) required to drive the transistor in figure to saturation is?

Question 4

Two GaAs wafers, one n-type and one p-type, are uniformly doped such that N_D (wafer 1) = N_A (wafer 2) ≥ n_i , which wafer will exhibit the larger resistivity?

Question 5

A silicon diode, with N_A=10¹⁷cm^-3 and N_D = 5 × 10¹⁷ cm^-3 , is forward biased with V_a = 0.05 V. Assume that the intrinsic concentration of silicon is n_i = 1.08 ×10¹⁰ cm^-3. What are the minority carrier concentrations ∆n_p(x_p) and ∆ p_n(x_n) at the edge of transition region?

Question 6

The electron concentration in a sample of uniformly doped n-type silicon at 300 K varies linearly from 10¹⁷/cm³ to at x = 0 to 6 × 10¹⁶ /cm³ at x = 2 µm. Assume a situation that electrons are supplied to keep this concentration gradient constant with time. If the electronic charge is 1.6 × 10^-19coulomb and the diffusion constant D_n = 35 cm²/s, the current density in the silicon if no electric field is present?

134 attempts
1 upvote
0 comments

Tags :

ESE & GATE EC Electronic Devices and Circuits

Jul 15ESE & GATE EC